DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on various computing platforms, such as home/personal computers, portable computers, and network servers. This type of memory has undergone several innovative technological developments and offers very high price/performance ratios.
Two types of DRAM are widely used for deployment in current generation servers: registered memory, and fully-buffered (FB) memory. Both these memory types are commercially available as DIMMs (dual inline memory modules). Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems. Fully-buffered DIMMs (or FB-DIMMs) are intended to be used in systems requiring higher memory densities with limited board space. As opposed to the parallel data transfer technique used in normal DRAM, FB-DIMMs transfer data in a serial format, using an additional buffer, known as advanced memory buffer (AMB) between the memory controller and the FB-DIMM modules. The AMB acts as an intermediary and handles all data reads/writes for the memory modules, taking care of issues such as signal degradation and error correction and reducing any overhead on the memory controller. Thus, FB-DIMMs prove to be a reliable alternative for deployment in server-grade machines.
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Samsung 16GB DDR-4 2400Mhz ECC, Supermicro certified
Samsung 16GB DDR4 memory module 1 x 16 GB
Samsung 16GB DDR4, 16 GB, 1 x 16 GB, DDR4, 2400 MHz, 288-pin DIMM
M391A2K43BB1-CRC
Unfortunately, no local stock.
Your price [ex]:
€ 144
Warranty:
1 Year Carry-In Warranty - for parts only - no Ahead-IT support - no advanced replacement
Specifications
Features
CAS latency
Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
17
Internal memory
A computer's memory which is directly accessible to the CPU.
16 GB
Memory layout (modules x size)
How the overall memory of the product is put together, defined by the number of modules and the size.
1 x 16 GB
Internal memory type
The type of internal memory such as RAM, GDDR5.
DDR4
Memory clock speed
The frequency at which the memory (e.g. RAM) runs.
2400 MHz
Component for
What this product is used as a part of (component for).
PC/Server
Memory form factor
Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Memory ranking
2
Memory voltage
The voltage (V) of the memory in the device.
1.2 V
Technical details
Compliance certificates
RoHS
Sustainability
Doesn't contain
Halogen
Weight & dimensions
Width
The measurement or extent of something from side to side.
133.3 mm
Height
The measurement of the product from head to foot or from base to top.
31.2 mm
Logistics data
Harmonized System (HS) code
84733020
Errors reserved. All product descriptions are indicative and not binding.